دیتاشیت SI4431BDY-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت | SI4431BDY-T1-GE3 |
|---|---|
| حجم فایل | 66.534 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت SI4431BDY-T1-GE3 |
SI4431BDY-T1-GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SI4431BDY-T1-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1.5W
- Total Gate Charge (Qg@Vgs): 20nC@5V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 5.7A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@7.5A,10V
- Package: SOP-8
- Manufacturer: Vishay Intertech
